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| STS9D8NH3LL Dual N-channel 30 V - 0.012 - 9 A - SO-8 low on-resistance STripFETTM Power MOSFET Features Type STS9D8NH3LL VDSS Q1 Q2 30V 30V RDS(on) < 0.022 < 0.015 Qg 7nC 8nC ID 8A 9A Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Application Switching applications Figure 1. Internal schematic diagram Description This device uses the latest advanced design rules of ST's STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters. Table 1. Device summary Order code Marking 9D8H3LLPackage SO-8 Packaging Tape & reel STS9D8NH3LL December 2007 Rev 3 1/14 www.st.com 14 Contents STS9D8NH3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 5 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/14 STS9D8NH3LL Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT EAS(2) Absolute maximum ratings Parameter Drain-source voltage (vGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Single pulse avalanche energy Type Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Value 30 30 16 16 8 9 5 6.3 32 36 2 2 150 Unit V V V V A A A A A A W W mJ 1. Pulse width limited by safe operating area 2. Starting TJ = 25 C, ID = 7.5 A Table 3. Symbol Rthj-a (1) TJ Tstg Thermal data Parameter Thermal resistance junction-ambient max Thermal operating junction-ambient Storage temperature Value 62.5 150 -55 to 150 Unit C/W C C 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t < 10s 3/14 Electrical characteristics STS9D8NH3LL 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IDSS IGSS VGS(th) RDS(on) RDS(on) On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS =Max rating @125C VGS = 16 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4 A VGS = 10 V, ID = 4.5 A VGS = 4.5 V, ID = 4 A VGS = 4.5 V, ID = 4.5 A Type Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 1 1 0.018 0.012 0.020 0.014 0.022 0.015 0.025 0.0175 Min. 30 30 1 1 10 10 100 100 Typ. Max. Unit V V A A A A nA nA V V Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 8 A, VGS = 4.5 V (see Figure 25) VDS = 25 V, f = 1 MHz, VGS = 0 Test conditions Type Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. Typ. 857 1070 147 290 20 34 7 8 2.5 2 2.3 2.8 10 11 Max. Unit pF pF pF pF pF pF nC nC nC nC nC nC 4/14 STS9D8NH3LL Table 6. Symbol td(on) tr td(off) tf Turn-off delay time Fall time Turn-on delay time Rise time Electrical characteristics Switching times Parameter Test conditions VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5 V (see Figure 27) VDD=15 V, ID=4 A, RG=4.7 , VGS= 4.5V (see Figure 27) Type Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. Typ. 12 8.2 14.5 6 23 27.8 8 3.6 Max. Unit ns ns ns ns ns ns ns ns Table 7. Symbol Source drain diode Parameter Test conditions VDD=15 V, ID=4 A , RG=4.7 VGS=4.5 V VDD=15 V, ID= 4A , RG=4.7 VGS=4.5 V ISD = 8 A, VGS = 0 Type Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 15 22.8 5.7 14.9 0.76 1.3 Min Typ. Max 8 9 32 36 1.5 1.5 Unit A A A A V V ns ns nC nC A A ISD Source-drain current ISDM (1) Source-drain current (pulsed) VSD (2) trr Qrr IRRM Forward on voltage Reverse recovery time ISD = 8 A, VDD = 15 V Reverse recovery charge di/dt = 100 A/s, T = 150C Reverse recovery current j (see Figure 26) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/14 Electrical characteristics STS9D8NH3LL 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for Q1 Figure 3. Safe operating area for Q2 Figure 4. Thermal impedance for Q1 Figure 5. Thermal impedance for Q2 Figure 6. Output characteristics for Q1 Figure 7. Output characteristics for Q2 6/14 STS9D8NH3LL Figure 8. Transfer characteristics for Q1 Figure 9. Electrical characteristics Transfer characteristics for Q2 Figure 10. Static drain-source on resistance for Q1 Figure 11. Static drain-source on resistance for Q2 Figure 12. Normalized BVDSS vs temperature for Q1 Figure 13. Normalized BVDSS vs temperature for Q2 7/14 Electrical characteristics STS9D8NH3LL Figure 14. Gate charge vs gate-source voltage Figure 15. Gate charge vs gate-source voltage for Q1 for Q2 Figure 16. Capacitance variations for Q1 Figure 17. Capacitance variations for Q2 Figure 18. Normalized gate threshold voltage vs temperature for Q1 Figure 19. Normalized gate threshold voltage vs temperature for Q2 8/14 STS9D8NH3LL Figure 20. Normalized on resistance vs temperature for Q1 Electrical characteristics Figure 21. Normalized on resistance vs temperature for Q2 Figure 22. Source-drain diode forward characteristics for Q1 Figure 23. Source-drain diode forward characteristics for Q2 9/14 Test circuit STS9D8NH3LL 3 Test circuit Figure 25. Gate charge test circuit Figure 24. Switching times test circuit for resistive load Figure 26. Test circuit for inductive load Figure 27. Unclamped Inductive load test switching and diode recovery times circuit Figure 28. Unclamped inductive waveform Figure 29. Switching time waveform 10/14 STS9D8NH3LL Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STS9D8NH3LL SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 12/14 STS9D8NH3LL Revision history 5 Revision history Table 8. Date 05-Jan-2007 06-Mar-2007 10-Dec-2007 Document revision history Revision 1 2 3 First release Some value changed on Table 4 (RDS(on) for Q2) Added EAS value on Table 2: Absolute maximum ratings Changes 13/14 STS9D8NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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